Transphorm TP65H035G4WS 650 V超级GaN FET Power Floorplan Analysis

Product Code
PFR-2010-803
Release Date
12/01/2021
Availability
Published
Product Item Code
TR0-TP65H035G4WS
Device Manufacturer
Transphorm Inc
Device Type
Unclassified
Subscription
Power Semiconductor
Channel
Power Semiconductor - Gallium Nitride (GaN) Floorplan
Report Code
PFR-2010-803
This report presents a power floorplan analysis of the Transphorm TP65H035G4WS device. The TP65H035G4WS is a 650 V, 35 mΩ on-resistance GaN power FET. The device combines high-voltage, normally-on, power GaN HEMT die, with 7G33C01 markings, and a power MOSFET in a stacked cascode configuration.

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