SK Hynix HFB1A8MQ431A0MR 96L 3D NAND Memory Periphery Design

公关oduct Code
MDP-1909-801
Release Date
19/12/2019
Availability
Published
公关oduct Item Code
HYN-HFB1A8MQ431A0MR
Device Manufacturer
Hynix
Device Type
NAND Flash
Subscription
Memory - NAND & DRAM
Channel
Memory - NAND Peripheral Design
Report Code
MDP-1909-801
This is a Memory Peripheral Design Analysis on the SK Hynix HFB1A8MQ431A0MR 96-layer 3D NAND flash memory. This device is a TLC NAND memory based on a charge trap flash (CTF) design with a peripheral circuit under cells (PUC) architecture.

login or register as a guest.">View Table of Contents

TechInsights Library

A unique vault of trusted, accurate data at your fingertips

Our analysis goes as deep as required to reveal the inner workings and secrets behind a broad range of products.